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SGA-4363Z PDF预览

SGA-4363Z

更新时间: 2024-01-19 08:22:04
品牌 Logo 应用领域
STANFORD 放大器射频微波
页数 文件大小 规格书
4页 253K
描述
DC-2000 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER

SGA-4363Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:TSSOP6,.08
Reach Compliance Code:unknown风险等级:5.12
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:12.5 dB
最大输入功率 (CW):18 dBmJESD-609代码:e3
安装特点:SURFACE MOUNT功能数量:1
端子数量:6最大工作频率:4000 MHz
最小工作频率:最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:TSSOP6,.08电源:3.2 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:49 mA表面贴装:YES
技术:BIPOLAR端子面层:Matte Tin (Sn)
Base Number Matches:1

SGA-4363Z 数据手册

 浏览型号SGA-4363Z的Datasheet PDF文件第2页浏览型号SGA-4363Z的Datasheet PDF文件第3页浏览型号SGA-4363Z的Datasheet PDF文件第4页 
Product Description  
SGA-4363  
Stanford Microdevices’SGA-4363 is a high performance SiGe  
HeterojunctionBipolarTransistorMMICAmplifier# ADarlington  
configuration featuring 1 micron emitters provides high FT and  
excellent thermal perfomance# The heterojunction increases  
breakdown voltage and minimizes leakage current between  
junctions# Cancellation of emitter junction non-linearities results  
in higher suppression of intermodulation products# At 850 Mhz  
and 45mA , the SGA-4363 typically provides +28#7 dBm output  
IP3, 16#4 dB of gain, and +14#3 dBm of 1dB compressed power  
using a single positive voltage supply# Only 2 DC-blocking  
capacitors, a bias resistor and an optional RF choke are required  
for operation#  
DC-2000 MHz, Cascadable  
SiGe HBT MMIC Amplifier  
Product Features  
• High Gain : 14ꢀ8 dB at 1950 MHz  
Gain & Return Loss vsꢀ Frequency  
• Cascadable 50 Ohm  
VD= 3ꢀ2 V, ID= 45 mA (Typꢀ)  
24  
18  
12  
6
0
• Patented SiGe Technology  
• Operates From Single Supply  
• Low Thermal Resistance Package  
ORL  
-10  
-20  
-30  
-40  
IRL  
GAIN  
Applications  
• Cellular, PCS, CDPD  
• Wireless Data, SONET  
• Satellite  
0
0
1
2
3
4
5
6
Frequency (GHz)  
Symbol  
Parameter  
Small Signal Gain  
Units  
Frequency  
Minꢀ  
Typꢀ  
Maxꢀ  
dB  
dB  
850 MHz  
1950 MHz  
14ꢀ8  
16ꢀ4  
14ꢀ8  
18ꢀ0  
G
dBm  
dBm  
850 MHz  
1950 MHz  
14ꢀ3  
13ꢀ0  
P1dB  
Output Power at 1dB Compression  
dBm  
dBm  
850 MHz  
1950 MHz  
28ꢀ7  
25ꢀ7  
Output Third Order Intercept Point  
(Power out per tone = -5dBm)  
OIP3  
Bandwidth  
IRL  
Determined by Return Loss (<-10dB)  
Input Return Loss  
MHz  
dB  
dB  
dB  
V
2000  
14ꢀ4  
10ꢀ7  
3ꢀ1  
1950 MHz  
1950 MHz  
1950 MHz  
ORL  
Output Return Loss  
Noise Figure  
NF  
Device Voltage  
2ꢀ9  
3ꢀ2  
3ꢀ5  
VD  
Thermal Resistance  
°C/W  
255  
RTh  
VS = 8 V  
RBIAS = 110 Ohms  
ID = 45 mATyp#  
TL = 25ºC  
OIP3 ToneSpacing=1MHz, Poutpertone=-5dBm  
ZS = ZL = 50 Ohms  
Test Conditions:  
The information provided herein is believed to be reliable at press timeꢀ Stanford Microdevices assumes no responsibility for inaccuracies or omissionsꢀ  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own riskꢀ Prices and specifications are  
subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are implied or granted to any third partyꢀ Stanford Microdevices does not  
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systemsꢀ  
Copyright 2000 Stanford Microdevices, Incꢀ All worldwide rights reservedꢀ  
726 Palomar Aveꢀ, Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://wwwꢀstanfordmicroꢀcom  
EDS-100642 Revꢀ B  

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