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SCA-15 PDF预览

SCA-15

更新时间: 2024-01-13 11:06:01
品牌 Logo 应用领域
STANFORD 放大器
页数 文件大小 规格书
3页 257K
描述
DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier

SCA-15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:TO-243Reach Compliance Code:unknown
风险等级:5.92特性阻抗:50 Ω
构造:COMPONENT增益:10 dB
最大输入功率 (CW):20 dBmJESD-609代码:e0
安装特点:SURFACE MOUNT端子数量:3
最大工作频率:3000 MHz最小工作频率:
最高工作温度:85 °C最低工作温度:-45 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:TO-243
电源:4 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers表面贴装:YES
技术:GAAS端子面层:Tin/Lead (Sn/Pb)
最大电压驻波比:1.5Base Number Matches:1

SCA-15 数据手册

 浏览型号SCA-15的Datasheet PDF文件第2页浏览型号SCA-15的Datasheet PDF文件第3页 
Product Description  
SCA-15  
Stanford Microdevices’ SCA-15 is a high performance Gallium  
Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier.  
A Darlington configuration is utilized for broadband  
performance up to 3 GHz. The heterojunction increases  
breakdown voltage and minimizes leakage current between  
junctions. Cancellation of emitter junction non-linearities  
results in higher suppression of intermodulation products.  
Typical IP3 at 50mA is +27dBm.  
DC-3 GHz, Cascadable  
GaAs HBT MMIC Amplifier  
These unconditionally stable amplifiers provides up to 12dB  
of gain and +13.5dBm of 1dB compressed power and  
requires only a single positive voltage supply. Only 2 DC-  
blocking capacitors, a bias resistor and an optional inductor  
are needed for operation.  
Product Features  
High Output IP3 : +27dBm  
This MMIC is an ideal choice for wireless applications such  
as cellular, PCS, CDPD, wireless data and SONET.  
Flat Gain : +/- 0.5dB Over Full Band  
Cascadable 50 Ohm : 1.5:1 VSWR  
Patented GaAs HBT Technology  
Operates From Single Supply  
Low Thermal Resistance Package  
Output IP3 vs. Frequency  
30  
28  
26  
dBm  
Applications  
24  
Cellular, PCS, CDPD  
Wireless Data, SONET  
22  
20  
0.1  
1
2
3
GHz  
Electrical Specifications at Ta = 25C  
P a r a m e t e r s : T e s t C o n d it io n s :  
S y m b o l  
U n it s  
M in .  
T y p .  
M a x .  
Id  
=
5 0 m A ,  
Z
= 5 0 O h m s  
0
f
f
=
=
0 .1 -2 .0 G H z  
2 .0 -3 .0 G H z  
d B  
d B  
1 0  
1 2  
11  
P o w e r G a in  
G a in F la tn e s s  
G
G
P
F
d B  
d B  
+ /- 0 . 5  
+ /- 0 . 1  
f
f
=
=
0 .1 -2 .0 G H z  
0 .1 -2 .0 G H z  
G a in F la tn e s s o v e r a n y 1 0 0 M H z b a n d  
O u tp u t P o w e r a t 1 d B C o m p re s s io n  
d B m  
1 3 .5  
P 1 d B  
N F  
N o is e F ig u re  
f
f
=
=
0 .1 -3 .0 G H z  
0 .1 -3 .0 G H z  
d B  
-
6 .0  
1 .5  
V S W R  
In p u t a n d O u tp u t V S W R  
T h ird O rd e r In te rc e p t P o in t  
f
=
0 .1 -2 .0 G H z  
d B m  
p s e c  
2 7 .0  
1 0 0  
IP 3  
O u tp u t To n e  
@ 0 d B m 1 0 M H z A p a rt  
G ro u p D e la y  
f
f
=
=
1 .9 G H z  
T D  
IS O L  
V D  
R e v e rs e Is o la tio n  
0 .1 -3 .0 G H z  
d B  
V
1 6  
4 .0  
D e v ic e V o lta g e  
3 .5  
4 .5  
d G /d T  
d V /d T  
D e v ic e G a in Te m p e ra tu re C o e ffic ie n t  
D e v ic e V o lta g e Te m p e ra tu re C o e ffic ie n t  
d B /d e g C  
m V /d e g C  
0 .0 0 1 5  
-4 .0  
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.  
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change  
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford  
Microdevices product for use in life-support devices and/or systems.  
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94086  
Phone: (800) SMI-MMIC  
http://www.stanfordmicro.com  
5-145  

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