Datasheet > NGA-586

NGA-586

更新时间： 2024-01-08 08:18:16

品牌	Logo	应用领域
STANFORD		放大器射频微波
页数	文件大小	规格书
4页	292K
描述
DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER

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技术参数
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NGA-586 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SL,4GW-LD,.085CIR	Reach Compliance Code：	unknown
风险等级：	5.83	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	17.8 dB
最大输入功率 (CW)：	15 dBm	安装特点：	SURFACE MOUNT
功能数量：	1	端子数量：	4
最大工作频率：	5500 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SL,4GW-LD,.085CIR
电源：	4.9 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	85 mA
表面贴装：	YES	技术：	BIPOLAR
最大电压驻波比：	1.2	Base Number Matches：	1

NGA-586 数据手册

Product Description

NGA-586

Stanford Microdevices NGA-586 is a high performance InGaP/

GaAs Heterojunction Bipolar Transistor MMIC Amplifier& A

Darlington configuration designed with InGaP process

technology provides broadband performance up to 5&5 GHz with

excellent thermal perfomance& The heterojunction increases

breakdown voltage and minimizes leakage current between

junctions& Cancellation of emitter junction non-linearities results

in higher suppression of intermodulation products& At 850 Mhz

and 80mA , the NGA-586 typically provides +39&6 dBm output

IP3, 19&8 dB of gain, and +18&9 dBm of 1dB compressed

power using a single positive voltage supply& Only 2 DC-

blocking capacitors, a bias resistor and an optional RF choke

are required for operation&

DC-5ꢀ5 GHz, Cascadable

InGaP/GaAs HBT MMIC Amplifier

Product Features

High Gain : 18ꢀ6 dB at 1950 MHz

Cascadable 50 Ohm

Gain & Return Loss vs. Freq. @T_L=+25°C

Patented InGaP Technology

Operates From Single Supply

Low Thermal Resistance Package

GAIN

IRL

-10

-20

-30

-40

ORL

Applications

Cellular, PCS, CDPD

Wireless Data, SONET

Satellite

Frequency (GHz)

Symbol

Parameter

Small Signal Gain

Units

Frequency

Minꢀ

Typꢀ

Maxꢀ

850 MHz

1950 MHz

2400 MHz

17ꢀ8

19ꢀ8

18ꢀ6

17ꢀ9

21ꢀ8

dBm

850 MHz

1950 MHz

18ꢀ9

18ꢀ5

P_1dB

Output Power at 1dB Compression

dBm

850 MHz

1950 MHz

39ꢀ6

34ꢀ0

Output Third Order Intercept Point

(Power out per tone = 0dBm)

OIP₃

Bandwidth

IRL

Determined by Return Loss (<-10dB)

Input Return Loss

MHz

5500

14ꢀ9

19ꢀ5

3ꢀ5

1950 MHz

ORL

Output Return Loss

Noise Figure

Device Voltage

4ꢀ5

4ꢀ9

5ꢀ4

V_D

Thermal Resistance

°C/W

121

R_Th

V_S= 8v

R_BIAS= 39 Ohms

I_D= 80mATyp&

T_L= 25ºC

IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm

Z_S= Z_L= 50 Ohms

Test Conditions:

The information provided herein is believed to be reliable at press timeꢀ Stanford Microdevices assumes no responsibility for inaccuracies or omissionsꢀ

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own riskꢀ Prices and specifications are

subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are implied or granted to any third partyꢀ Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systemsꢀ

726 Palomar Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀstanfordmicroꢀcom

EDS-101105 Revꢀ D

12 3 4

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