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CGA-3318

更新时间: 2024-02-23 19:56:00
品牌 Logo 应用领域
STANFORD 放大器有线电视
页数 文件大小 规格书
8页 356K
描述
Dual CATV Broadband High Linearity SiGe HBT Amplifier

CGA-3318 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SOP8,.25Reach Compliance Code:compliant
ECCN代码:5A991.GHTS代码:8542.33.00.01
风险等级:5.14特性阻抗:50 Ω
构造:COMPONENT增益:10 dB
最大输入功率 (CW):18 dBm安装特点:SURFACE MOUNT
功能数量:2端子数量:8
最大工作频率:900 MHz最小工作频率:5 MHz
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SOP8,.25
电源:4.1 V射频/微波设备类型:WIDE BAND LOW POWER
子类别:RF/Microwave Amplifiers最大压摆率:165 mA
表面贴装:YESBase Number Matches:1

CGA-3318 数据手册

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CGA-3318  
Product Description  
Dual CATV Broadband High  
Linearity SiGe HBTAmplifier  
Sirenza Microdevice’s CGA-3318 is a high performance Silicon  
Germanium HBT MMICAmplifier. Designed with SiGe process  
technology for excellent linearity at an exceptional price. A  
Darlington configuration is utilized for broadband performance.  
The heterojunction increases breakdown voltage and minimizes  
leakage current between junctions. The CGA-3318 contains  
two amplifiers for use in wideband Push-Pull CATV amplifiers  
requiring excellent second order performance. The second and  
third order non-linearities are greatly improved in the push pull  
configuration.  
Product Features  
Excellent CSO/CTB/XMOD Performance at  
+34 dBmV Output Power per Tone  
Amplifier Configuration  
Dual Devices in each SOIC-8 Package simplify  
Push-Pull configuration PC board layout  
5 to 900 MHz operation  
1
2
3
4
8
7
6
5
Applications  
CATV Head End Driver and Predriver Amplifier  
ELECTRICAL SPECIFICATIONS  
Symbol  
Parameter  
Freq.(MHz)  
Min.  
Typ.  
Max.  
Units  
*5  
13.2  
12.5  
12.5  
12.0  
Small Signal Gain  
50  
G
dB  
*See 5-100 MHz Application Circuit, pg. 7.  
500  
870  
10.0  
67.0  
36.0  
50  
69.0  
71.5  
69.0  
36.5  
38.0  
38.0  
20.0  
21.0  
20.6  
Output Second Order Intercept Point  
OIP2  
OIP3  
P1dB  
250  
dBm  
dBm  
dBm  
Tone Spacing = 1 MHz, Pout per tone = +6 dBm  
500  
50  
Output Third Order Intercept Point  
500  
Tone Spacing = 1 MHz, Pout per tone = +6 dBm  
870  
50  
Output Power at 1dB Gain Compression  
500  
870  
18.6  
10  
500  
17.0  
IRL  
Input Return Loss  
dB  
dB  
50-870  
500  
12.0  
ORL  
Output Return Loss  
50-870  
10  
50  
4.2  
4.3  
5.0  
Noise Figure  
NF  
500  
870  
dB  
Balun Insertion Loss Included  
6.0  
CSO  
CTB  
XMOD  
VD  
Worst Case Over Band, 79 Ch., Flat, +34dBmV  
Worst Case Over Band, 79 Ch., Flat, +34dBmV  
Worst Case Over Band, 79 Ch., Flat, +34dBmV  
Device Operating Voltage  
70  
68  
63  
4.1  
150  
dBc  
dBc  
dBc  
V
3.9  
135  
4.3  
165  
ID  
Device Operating Current  
mA  
RTH(J-L)  
Thermal Resistance (Junction to Lead)  
50  
°C/W  
Test Conditions: VS = 8 V RBIAS = 51 Ohms ID = 150 mA Typ. @ TL = 25ºC  
ZS = ZL = 75 Ohms Push Pull Application Circuit  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of  
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are  
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..  
All worldwide rights reserved.  
303 S. Technology Ct., Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-101993 Rev G  

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