STA723D-O

更新时间： 2024-11-09 13:14:07

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管功率双极晶体管
页数	文件大小	规格书
4页	242K
描述
Power Bipolar Transistor, 3A I(C), PNP,

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数据手册

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STA723D-O 数据手册

STA723D

PNP Silicon Transistor

Description

• General purpose amplifier

PIN Connection

• D-PAK for surface mount applications

Features

• P_C(Collector dissipation)=15W

• Low speed switching applications

• Complementary pair with STC722D

TO-252

Ordering Information

Type NO.

Marking

Package Code

STA723

□YWW

STA723D

TO-252

□ : h_FErank, YWW(Y : Year code, WW : Weekly code)

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-40

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

-30

-5

-3

A(DC)

A(Pulse)

Collector current

I_CP*

P_C

-6

Collector Power dissipation (Tc=25℃)

Junction temperature

T_j

150

-55~150

°C

Storage temperature

T_stg

°C

* : Single pulse, tp= 300 ㎲

Electrical Characteristics

(Ta=25°C)

Min. Typ. Max. Unit

Characteristic

Symbol

Test Condition

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=-50μA, I_B=0

-40

-30

-5

I_C=-1mA, I_B=0

I_E=-50μA, I_B=0

V_CB=-20V, I_B=0

V_EB=-4V, V_BE=0

V_CE=-3V, I_C=-500mA

V_CE=-3V, I_C=-3A

I_C=-2A, I_B=-200mA

-1

390

μA

Emitter cut-off current

I_EBO

DC current gain

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

-0.5

-0.8

V_CE=-5V, I_C=-500mA,

f=1MHz

120

MHz

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

* : h_FErank / O : 80~218, Y : 120~270, G : 180~390

KSD-T6O018-001

12 3 4

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