Datasheet > STA6620

STA6620

更新时间： 2024-09-24 06:14:31

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
6页	117K
描述
Dual N-Channel E nhancement Mode F ield E ffect Transistor

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STA6620 数据手册

S TA6620

Nov. 24 2006

S amHop Microelectronics Corp.

Dual N-Channel E nhancement Mode Field E ffect Transistor

FE ATUR E S

PR ODUCT S UMMAR Y

S uper high dense cell design for low R DS (ON).

VDS S

R DS (ON) ( m Ω ) Max

R ugged and reliable.

25 @ VGS = 10V

42 @ VGS = 4.5V

S urface Mount Package.

E S D Protected.

40V

D1 D1 D2 D2

PDIP-8

S 1 G1 S 2 G2

ABS OLUTE MAXIMUM R ATINGS (T

Parameter

=25 C unless otherwise noted)

Limit

Unit

S ymbol

VDS

Drain-S ource Voltage

VGS

Gate-S ource Voltage

25 C

Drain Current-Continuous @ Ta

70 C

5.9

-Pulsed ^b

IDM

Drain-S ource Diode Forward Current ^a

1.7

Ta= 25 C

Maximum Power Dissipation ^a

Ta=70 C

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient ^a

41.5

12 3 4 5 6

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