Datasheet > STA6611

STA6611

更新时间： 2024-09-24 06:14:31

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
10页	180K
描述
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

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STA6611 数据手册

STA6611

Nov. 22, 2006

SamHop Microelectronics Corp.

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

(N-Channel)

(P-Channel)

PRODUCT SUMMARY

VDSS

30V

RDS(ON) ( m

Ω

) Max

VDSS

-30V

RDS(ON) ( m Ω ) Max

23 @ VGS = 10V

30 @ VGS = 4.5V

35 @ VGS = -10V

55 @ VGS = -4.5V

-6.6A

7.6A

D1 D1 D2 D2

PDIP-8

S 1 G1 S 2 G2

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

N-Channel P-Channel

Unit

Parameter

S ymbol

VDS

Drain-S ource Voltage

-30

VGS

Gate-S ource Voltage

7.6

- 6.6

5.3

25 C

70 C

Drain Current-Continuous @ Ta

-Pulsed ^b

IDM

Drain-S ource Diode Forward Current ^a

1.7

-1.7

Ta= 25 C

Ta=70 C

Maximum Power Dissipation ^a

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient ^a

41.5

12 3 4 5 6 7...10

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