Datasheet > STA6610

STA6610

更新时间： 2024-09-24 06:14:31

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
6页	118K
描述
Dual N-Channel E nhancement Mode F ield E ffect Transistor

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STA6610 数据手册

S TA6610

Nov.24 2006

S amHop Microelectronics Corp.

Dual N-Channel E nhancement Mode Field E ffect Transistor

FE ATUR E S

PR ODUCT S UMMAR Y

S uper high dense cell design for low R DS (ON).

VDS S

R DS (ON) ( m Ω ) Max

R ugged and reliable.

23 @ VGS = 10V

35 @ VGS = 4.5V

S urface Mount Package.

E S D Protected.

30V

7.6A

D1 D1 D2 D2

PDIP-8

S 1 G1 S 2 G2

ABS OLUTE MAXIMUM R ATINGS (T

=25 C unless otherwise noted)

N-Channel

Unit

Parameter

S ymbol

VDS

Drain-S ource Voltage

VGS

Gate-S ource Voltage

7.6

25 C

Drain Current-Continuous @ Ta

70 C

-Pulsed ^b

IDM

Drain-S ource Diode Forward Current ^a

1.7

Ta= 25 C

Maximum Power Dissipation ^a

Ta=70 C

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient ^a

41.5

12 3 4 5 6

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