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ST95P08M6TR PDF预览

ST95P08M6TR

更新时间: 2024-11-24 22:50:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
16页 121K
描述
8 Kbit Serial SPI EEPROM with Positive Clock Strobe

ST95P08M6TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; SPI BUS SERIAL INTERFACE; 16 BYTE PAGE WRITE最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3.3/5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:EEPROMs
最大压摆率:0.002 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

ST95P08M6TR 数据手册

 浏览型号ST95P08M6TR的Datasheet PDF文件第2页浏览型号ST95P08M6TR的Datasheet PDF文件第3页浏览型号ST95P08M6TR的Datasheet PDF文件第4页浏览型号ST95P08M6TR的Datasheet PDF文件第5页浏览型号ST95P08M6TR的Datasheet PDF文件第6页浏览型号ST95P08M6TR的Datasheet PDF文件第7页 
ST95P08  
8 Kbit Serial SPI EEPROM with Positive Clock Strobe  
1 MILLION ERASE/WRITE CYCLES  
40 YEARS DATA RETENTION  
SINGLE 3V to 5.5V SUPPLY VOLTAGE  
SPI BUS COMPATIBLE SERIAL INTERFACE  
2 MHz CLOCK RATE MAX  
8
BLOCK WRITE PROTECTION  
STATUS REGISTER  
8
1
1
16 BYTE PAGE MODE  
WRITE PROTECT  
SO8 (M)  
150mil Width  
PSDIP8 (B)  
0.25mm Frame  
SELF-TIMED PROGRAMMING CYCLE  
E.S.D.PROTECTION GREATER than 4000V  
SUPPORTS POSITIVE CLOCK SPI MODES  
DESCRIPTION  
Figure 1. Logic Diagram  
The ST95P08 is an 8 Kbit Electrically Erasable  
Programmable Memory (EEPROM) fabricated with  
STMicroelectronics’s High Endurance Single  
Polysilicon CMOS technology. The 8 Kbit memory  
is organised as 64 pages of 16 bytes. The memory  
is accessed by a simple SPI bus compatible serial  
interface. The bus signals are a serial clock input  
(C), a serial data input (D) and a serial data output  
(Q). The device connected to the bus is selected  
when the chip select input (S) goes low. Commu-  
nications with the chip can be interrupted with a  
hold input (HOLD). The write operation is disabled  
by a write protect input (W).  
V
CC  
D
C
S
Q
ST95P08  
Table 1. Signal Names  
W
C
Serial Clock  
Serial Data Input  
Serial Data Output  
Chip Select  
Write Protect  
Hold  
HOLD  
D
Q
S
V
SS  
AI01315  
W
HOLD  
VCC  
VSS  
Supply Voltage  
Ground  
February 1999  
1/16  

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