Datasheet > ST93CS67B6

ST93CS67B6

更新时间： 2024-09-15 23:34:55

品牌	Logo	应用领域
其他 - ETC		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	126K
描述
Microwire Serial EEPROM

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中文翻译

获取价格

数据手册

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ST93CS67B6 数据手册

ST93CS66

ST93CS67

4K (256 x 16) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATARETENTION

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS66

– 2.5V to 5.5V for the ST93CS67

USER DEFINED WRITE PROTECTED AREA

PAGE WRITE MODE (4 WORDS)

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

PSDIP8 (B)

0.25mm Frame

SO14 (ML)

150mil Width

ST93CS66 and ST93CS67 are replaced by

the M93S66

Figure 1. Logic Diagram

DESCRIPTION

The ST93CS66 and ST93CS67 are 4K bit Electri-

cally Erasable Programmable Memory (EEPROM)

fabricatedwith SGS-THOMSON’s High Endurance

Single Polysilicon CMOS technology. The memory

is accessed through a serial input D and output Q.

The 4K bit memory is organized as 256 x 16 bit

words.Thememory is accessedby a set of instruc-

tions which include Read, Write, Page Write, Write

All and instructions used to set the memory protec-

tion. A Read instruction loads the address of the

first word to be read into an internal address

pointer.

ST93CS66

ST93CS67

PRE

Table 1. Signal Names

Chip Select Input

Serial Data Input

Serial Data Output

Serial Clock

AI00906B

PRE

Protect Enable

Write Enable

V_CC

V_SS

Supply Voltage

Ground

June 1997

1/16

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...16

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