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ST93CS56B3013TR PDF预览

ST93CS56B3013TR

更新时间: 2024-09-15 22:20:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
16页 126K
描述
2K 128 x 16 SERIAL MICROWIRE EEPROM

ST93CS56B3013TR 数据手册

 浏览型号ST93CS56B3013TR的Datasheet PDF文件第2页浏览型号ST93CS56B3013TR的Datasheet PDF文件第3页浏览型号ST93CS56B3013TR的Datasheet PDF文件第4页浏览型号ST93CS56B3013TR的Datasheet PDF文件第5页浏览型号ST93CS56B3013TR的Datasheet PDF文件第6页浏览型号ST93CS56B3013TR的Datasheet PDF文件第7页 
ST93CS56  
ST93CS57  
2K (128 x 16) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SINGLE SUPPLY VOLTAGE  
8
8
– 3V to 5.5V for the ST93CS56  
– 2.5V to 5.5V for the ST93CS57  
USER DEFINED WRITE PROTECTED AREA  
PAGE WRITE MODE (4 WORDS)  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
1
1
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
ST93CS56 and ST93CS57 are replaced by  
the M93S56  
Figure 1. Logic Diagram  
DESCRIPTION  
The ST93CS56 and ST93CS57 are 2K bit Electri-  
cally Erasable Programmable Memory (EEPROM)  
fabricatedwith SGS-THOMSON’s High Endurance  
Single Polysilicon CMOS technology. The memory  
is accessed through a serial input D and output Q.  
V
CC  
The 2K bit memory is organized as 128 x 16 bit  
words.Thememory is accessedby a set of instruc-  
tions which include Read, Write, Page Write, Write  
All and instructions used to set the memory protec-  
tion. A Read instruction loads the address of the  
first word to be read into an internal address  
pointer.  
D
C
Q
ST93CS56  
ST93CS57  
S
PRE  
W
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
Q
V
SS  
C
AI00896B  
PRE  
W
Protect Enable  
Write Enable  
VCC  
VSS  
Supply Voltage  
Ground  
June 1997  
1/16  
This is information on a product still in production but not recommended for new designs.  

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