Datasheet > ST93CS47B6013TR

ST93CS47B6013TR

更新时间： 2024-11-05 22:15:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	125K
描述
1K 64 x 16 SERIAL MICROWIRE EEPROM

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中文翻译

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数据手册

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ST93CS47B6013TR 数据手册

ST93CS46

ST93CS47

1K (64 x 16) SERIAL MICROWIRE EEPROM

NOT FOR NEW DESIGN

1 MILLION ERASE/WRITE CYCLES, with

40 YEARS DATARETENTION

SELF-TIMED PROGRAMMING CYCLE with

AUTO-ERASE

READY/BUSY SIGNAL DURING

PROGRAMMING

SINGLE SUPPLY VOLTAGE

– 3V to 5.5V for the ST93CS46

– 2.5V to 5.5V for the ST93CS47

USER DEFINED WRITE PROTECTED AREA

PAGE WRITE MODE (4 WORDS)

SEQUENTIAL READ OPERATION

5ms TYPICAL PROGRAMMING TIME

PSDIP8 (B)

0.4mm Frame

SO8 (M)

150mil Width

ST93CS46 and ST93CS47 are replaced by

the M93S46

Figure 1. Logic Diagram

DESCRIPTION

The ST93CS46 and ST93CS47 are 1K bit Electri-

cally Erasable Programmable Memory (EEPROM)

fabricatedwith SGS-THOMSON’s High Endurance

Single Polysilicon CMOS technology. The memory

is accessed through a serial input D and output Q.

The 1K bit memory is organized as 64 x 16 bit

words.Thememory is accessedby a set of instruc-

tions which include Read, Write, Page Write, Write

All and instructions used to set the memory protec-

tion. A Read instruction loads the address of the

first word to be read into an internal address

pointer.

ST93CS46

ST93CS47

PRE

Table 1. Signal Names

Chip Select Input

Serial Data Input

Serial Data Output

Serial Clock

AI00884B

PRE

Protect Enable

Write Enable

V_CC

V_SS

Supply Voltage

Ground

June 1997

1/16

This is information on a product still in production but not recommended for new designs.

12 3 4 5 6 7...16

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