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ST93CS46M1013TR PDF预览

ST93CS46M1013TR

更新时间: 2024-11-05 22:15:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
16页 125K
描述
1K 64 x 16 SERIAL MICROWIRE EEPROM

ST93CS46M1013TR 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOIC包装说明:0.150 INCH, PLASTIC, SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.81Is Samacsys:N
其他特性:1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

ST93CS46M1013TR 数据手册

 浏览型号ST93CS46M1013TR的Datasheet PDF文件第2页浏览型号ST93CS46M1013TR的Datasheet PDF文件第3页浏览型号ST93CS46M1013TR的Datasheet PDF文件第4页浏览型号ST93CS46M1013TR的Datasheet PDF文件第5页浏览型号ST93CS46M1013TR的Datasheet PDF文件第6页浏览型号ST93CS46M1013TR的Datasheet PDF文件第7页 
ST93CS46  
ST93CS47  
1K (64 x 16) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
READY/BUSY SIGNAL DURING  
PROGRAMMING  
SINGLE SUPPLY VOLTAGE  
8
8
– 3V to 5.5V for the ST93CS46  
– 2.5V to 5.5V for the ST93CS47  
USER DEFINED WRITE PROTECTED AREA  
PAGE WRITE MODE (4 WORDS)  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
1
1
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
ST93CS46 and ST93CS47 are replaced by  
the M93S46  
Figure 1. Logic Diagram  
DESCRIPTION  
The ST93CS46 and ST93CS47 are 1K bit Electri-  
cally Erasable Programmable Memory (EEPROM)  
fabricatedwith SGS-THOMSON’s High Endurance  
Single Polysilicon CMOS technology. The memory  
is accessed through a serial input D and output Q.  
V
CC  
The 1K bit memory is organized as 64 x 16 bit  
words.Thememory is accessedby a set of instruc-  
tions which include Read, Write, Page Write, Write  
All and instructions used to set the memory protec-  
tion. A Read instruction loads the address of the  
first word to be read into an internal address  
pointer.  
D
C
Q
ST93CS46  
ST93CS47  
S
PRE  
W
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
Q
V
SS  
C
AI00884B  
PRE  
W
Protect Enable  
Write Enable  
VCC  
VSS  
Supply Voltage  
Ground  
June 1997  
1/16  
This is information on a product still in production but not recommended for new designs.  

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