5秒后页面跳转
ST93C56M1013TR PDF预览

ST93C56M1013TR

更新时间: 2024-02-16 17:35:04
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
13页 110K
描述
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM

ST93C56M1013TR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.73
Is Samacsys:N其他特性:MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS
备用内存宽度:8最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

ST93C56M1013TR 数据手册

 浏览型号ST93C56M1013TR的Datasheet PDF文件第2页浏览型号ST93C56M1013TR的Datasheet PDF文件第3页浏览型号ST93C56M1013TR的Datasheet PDF文件第4页浏览型号ST93C56M1013TR的Datasheet PDF文件第5页浏览型号ST93C56M1013TR的Datasheet PDF文件第6页浏览型号ST93C56M1013TR的Datasheet PDF文件第7页 
ST93C56, 56C  
ST93C57C  
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 128 x 16 or 256 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
– 4.5V to 5.5V for ST93C56 version  
– 3V to 5.5V for ST93C57 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ST93C56, ST93C56C, ST93C57C are  
replaced by the M93C56  
Figure 1. Logic Diagram  
DESCRIPTION  
This specification covers a range of 2K bit serial  
EEPROM products, the ST93C56, 56C specified  
at 5V ± 10% and the ST93C57C specified at 3V to  
5.5V. In the text, products are referred to as  
ST93C56.  
V
CC  
The ST93C56 is a 2K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q). The 2K  
bit memory is divided into either 256 x 8 bit bytes  
or 128 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
D
C
Q
ST93C56  
ST93C57  
S
ORG  
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
V
SS  
D
AI00881C  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

ST93C56M1013TR 替代型号

型号 品牌 替代类型 描述 数据表
FM93C56AM8 FAIRCHILD

功能相似

EEPROM, 128X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8
NM93C56AM8 FAIRCHILD

功能相似

Microwire Serial EEPROM

与ST93C56M1013TR相关器件

型号 品牌 获取价格 描述 数据表
ST93C56M1TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C56M3 ETC

获取价格

Microwire Serial EEPROM
ST93C56M3013TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C56M3TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C56M6 ETC

获取价格

Microwire Serial EEPROM
ST93C56M6013TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C56M6TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C57B1013TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C57B1TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
ST93C57B3013TR STMICROELECTRONICS

获取价格

2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM