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ST93C56CM3TR PDF预览

ST93C56CM3TR

更新时间: 2024-11-15 22:40:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
13页 110K
描述
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM

ST93C56CM3TR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.33
Is Samacsys:N其他特性:1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16
备用内存宽度:8最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:40耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-40 °C组织:128X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.00005 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

ST93C56CM3TR 数据手册

 浏览型号ST93C56CM3TR的Datasheet PDF文件第2页浏览型号ST93C56CM3TR的Datasheet PDF文件第3页浏览型号ST93C56CM3TR的Datasheet PDF文件第4页浏览型号ST93C56CM3TR的Datasheet PDF文件第5页浏览型号ST93C56CM3TR的Datasheet PDF文件第6页浏览型号ST93C56CM3TR的Datasheet PDF文件第7页 
ST93C56, 56C  
ST93C57C  
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 128 x 16 or 256 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
– 4.5V to 5.5V for ST93C56 version  
– 3V to 5.5V for ST93C57 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ST93C56, ST93C56C, ST93C57C are  
replaced by the M93C56  
Figure 1. Logic Diagram  
DESCRIPTION  
This specification covers a range of 2K bit serial  
EEPROM products, the ST93C56, 56C specified  
at 5V ± 10% and the ST93C57C specified at 3V to  
5.5V. In the text, products are referred to as  
ST93C56.  
V
CC  
The ST93C56 is a 2K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q). The 2K  
bit memory is divided into either 256 x 8 bit bytes  
or 128 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
D
C
Q
ST93C56  
ST93C57  
S
ORG  
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
V
SS  
D
AI00881C  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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