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ST93C47CB6TR PDF预览

ST93C47CB6TR

更新时间: 2024-11-15 22:22:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 113K
描述
1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM

ST93C47CB6TR 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:DIP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
Is Samacsys:N最长访问时间:500 ns
备用内存宽度:16JESD-30 代码:R-PDIP-T8
长度:9.55 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:128 words字数代码:128
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified座面最大高度:4.8 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):3 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL宽度:7.62 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

ST93C47CB6TR 数据手册

 浏览型号ST93C47CB6TR的Datasheet PDF文件第2页浏览型号ST93C47CB6TR的Datasheet PDF文件第3页浏览型号ST93C47CB6TR的Datasheet PDF文件第4页浏览型号ST93C47CB6TR的Datasheet PDF文件第5页浏览型号ST93C47CB6TR的Datasheet PDF文件第6页浏览型号ST93C47CB6TR的Datasheet PDF文件第7页 
ST93C46A,46C,46T  
ST93C47C,47T  
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 64 x 16 or 128 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE SUPPLY VOLTAGE:  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
– 4.5V to 5.5V for ST93C46 version  
– 3V to 5.5V for ST93C47 version  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
ENHANCED ESD/LATCH UP  
PERFORMANCE for ”C” VERSION  
Figure 1. Logic Diagram  
ST93C46A, ST93C46C, ST93C46T,  
ST93C47C, ST93C47T are replaced by the  
M93C46  
DESCRIPTION  
This specification covers a range of 1K bit serial  
EEPROM products, the ST93C46A,46C,46T  
specified at 5V±10% and the ST93C47C,47T  
specifiedat 3V to 5.5V.  
V
CC  
In the text, products are referred to as ST93C46.  
The ST93C46 is a 1K bit Electrically Erasable  
ProgrammableMemory(EEPROM)fabricatedwith  
SGS-THOMSON’s High EnduranceSingle Polysili-  
con CMOS technology. The memory is accessed  
through a serial input (D) and output (Q).  
D
C
Q
ST93C46  
ST93C47  
S
Table 1. Signal Names  
ORG  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
D
V
SS  
AI00871C  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/13  
This is information on a product still in production but not recommended for new designs.  

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