是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | 0.150 INCH, PLASTIC, SO-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.76 | 其他特性: | MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS |
备用内存宽度: | 8 | 最大时钟频率 (fCLK): | 1 MHz |
数据保留时间-最小值: | 40 | 耐久性: | 1000000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 内存密度: | 1024 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 128 words | 字数代码: | 128 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 组织: | 128X8 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
并行/串行: | SERIAL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
串行总线类型: | MICROWIRE | 最大待机电流: | 0.00005 A |
子类别: | EEPROMs | 最大压摆率: | 0.003 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
宽度: | 3.9 mm | 最长写入周期时间 (tWC): | 10 ms |
写保护: | SOFTWARE | Base Number Matches: | 1 |
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