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ST93C06M6013TR PDF预览

ST93C06M6013TR

更新时间: 2024-11-17 22:39:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
15页 119K
描述
256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM

ST93C06M6013TR 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SO-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.9
Is Samacsys:N其他特性:MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS
备用内存宽度:8最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:10耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:256 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:16 words字数代码:16
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:16X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大待机电流:0.00005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

ST93C06M6013TR 数据手册

 浏览型号ST93C06M6013TR的Datasheet PDF文件第2页浏览型号ST93C06M6013TR的Datasheet PDF文件第3页浏览型号ST93C06M6013TR的Datasheet PDF文件第4页浏览型号ST93C06M6013TR的Datasheet PDF文件第5页浏览型号ST93C06M6013TR的Datasheet PDF文件第6页浏览型号ST93C06M6013TR的Datasheet PDF文件第7页 
ST93C06  
ST93C06C  
256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM  
NOT FOR NEW DESIGN  
1 MILLION ERASE/WRITE CYCLES, with  
40 YEARS DATARETENTION  
DUAL ORGANIZATION: 16 x 16 or 32 x 8  
BYTE/WORDand ENTIRE MEMORY  
PROGRAMMING INSTRUCTIONS  
SELF-TIMED PROGRAMMING CYCLE with  
AUTO-ERASE  
8
8
READY/BUSY SIGNAL DURING  
PROGRAMMING  
1
1
SINGLE 5V ±10% SUPPLY VOLTAGE  
SEQUENTIAL READ OPERATION  
5ms TYPICAL PROGRAMMING TIME  
PSDIP8 (B)  
0.4mm Frame  
SO8 (M)  
150mil Width  
ENHANCED ESD/LATCH UP  
PERFORMANCES for ”C” VERSION  
ST93C06 and ST93C06C are replaced by  
the M93C06  
Figure 1. Logic Diagram  
DESCRIPTION  
The ST93C06 and ST93C06C are 256 bit Electri-  
cally Erasable Programmable Memory (EEPROM)  
fabricatedwith SGS-THOMSON’s High Endurance  
SinglePolysilicon CMOS technology.Inthetext the  
two products are referred to as ST93C06.  
The memory is divided into either 32 x 8 bit bytes  
or 16 x 16 bit words. The organization may be  
selected by a signal applied on the ORG input.  
V
CC  
The memory is accessed througha serial input (D)  
and by a set of instructions which includes Read a  
byte/word, Write a byte/word, Erase a byte/word,  
EraseAlland WriteAll. ARead instruction loadsthe  
address of the first byte/word to be read into an  
internal address pointer.  
D
Q
C
S
ST93C06  
ST93C06C  
ORG  
Table 1. Signal Names  
S
Chip Select Input  
Serial Data Input  
Serial Data Output  
Serial Clock  
V
SS  
D
AI00816B  
Q
C
ORG  
VCC  
VSS  
Organisation Select  
Supply Voltage  
Ground  
June 1997  
1/15  
This is information on a product still in production but not recommended for new designs.  

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