Datasheet > ST9012

ST9012

更新时间： 2022-12-16 23:02:26

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	248K
描述
PNP Silicon Epitaxial Planar Transistor

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ST9012 数据手册

ST 9012

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into three groups, G,

H and I, according to its DC current gain. As

complementary type the NPN transistor 9013 is

recommended.

1. Emitter 2. Base 3. Collector

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

500

Collector Current

Power Dissipation

P_tot

625

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 1 V, -I_C= 50 mA

Current Gain Group G

h_FE

110

177

250

183

250

380

at -V_CE= 1 V, -I_C= 500 mA

Collector Base Cutoff Current

at -V_CB= 35 V

Emitter Base Cutoff Current

at -V_EB= 5 V

Collector Base Breakdown Voltage

at -I_C= 100 μA

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

-I_CBO

-I_EBO

100

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

-V_BE

Emitter Base Breakdown Voltage

at -I_E= 100 μA

Collector Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Base Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Base Emitter Voltage

at -V_CE= 1 V, -I_C= 100 mA

Gain Bandwidth Product

at -V_CE= 6 V, -I_C= 20 mA

0.6

1.2

f_T

100

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 19/03/2009

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