Datasheet > ST8550B

ST8550B

更新时间： 2024-11-10 01:08:43

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
5页	105K
描述
PNP Silicon Epitaxial Planar Transistor

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ST8550B 数据手册

8550

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into four groups, B, C, D

and E, according to its DC current gain. As

complementary type the NPN transistor ST 8050 is

recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25℃)

Symbol

-V_CEO

-V_CBO

-V_EBO

-I_C

Value

Unit

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

800

Peak Collector Current

Base Current

-I_CM

-I_B

100

^OC

Power Dissipation

P_tot

625¹⁾

Junction Temperature

T_j

150

Storage Temperature Range

T_S

-55 to +150

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

12 3 4 5

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ST8550E	DGNJDZ	获取价格	PNP Silicon Epitaxial Planar Transistor
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