Datasheet > ST75N75

ST75N75

更新时间： 2024-06-26 08:51:38

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ST75N75 数据手册

ST75N75

N Channel Enhancement Mode MOSFET

75.0A

DESCRIPTION

ST75N75 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

PIN CONFIGURATION

TO220-3L

FEATURE

ꢀ

75V/40.0A, R_DS(ON)= 8mꢀ (Typ.)

@VGS = 10V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢁresistance and

maximum DC current capability

TOꢁ220 package design

PIN CONFI

MARKING

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST75N75 2011. V1

12 3 4 5 6

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