Datasheet > ST330S08P1PBF

ST330S08P1PBF

更新时间： 2024-11-05 06:17:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	83K
描述
Silicon Controlled Rectifier, 520A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE, HERMETIC SEALED, METAL, TO-118, 3 PIN

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ST330S08P1PBF 数据手册

Bulletin I25156 rev. C 03/03

ST330S SERIES

PHASE CONTROL THYRISTORS

Stud Version

Features

Center amplifying gate

Hermetic metal case with ceramic insulator

International standard case TO-209AE (TO-118)

330A

Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

Typical Applications

DC motor controls

Controlled DC power supplies

AC controllers

Major Ratings and Characteristics

Parameters

I_T(AV)

ST330S

330

Units

@ T_C

°C

I_T(RMS)

I_TSM

520

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

9000

9420

405

I²t

KA²s

370

V_DRM/V_RRM

400 to 2000

100

typical

µs

case style

TO-209AE (TO-118)

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7 8

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与ST330S08P1PBF相关器件

型号	品牌	获取价格	描述	数据表
ST330S08P3L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 800V V(DRM)
ST330S08P3LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AE
ST330S10F0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST330S10M0	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST330S10M0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST330S10P0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 520A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST330S12F0	INFINEON	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE
ST330S12M0	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, DO-209AE, TO-209AE, 3 PIN
ST330S12M0L	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE
ST330S12M1	VISHAY	获取价格	Silicon Controlled Rectifier, 520 A, 1200 V, SCR, TO-209AE