Datasheet > ST303C10CHH1P

ST303C10CHH1P

更新时间： 2024-11-27 06:51:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	309K
描述
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3

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ST303C10CHH1P 数据手册

ST303CPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(PUK Version), 620 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

RoHS

COMPLIANT

• Guaranteed high dI/dt

• International standard case TO-200AB (E-PUK)

• High surge current capability

• Low thermal impedance

TO-200AB (E-PUK)

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Inverters

PRODUCT SUMMARY

I_T(AV)

620 A

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

620

UNITS

°C

I_T(AV)

T_hs

1180

I_T(RMS)

I_TSM

I²t

T_hs

°C

50 Hz

60 Hz

50 Hz

60 Hz

7950

8320

316

kA²s

289

_DRM/V_RRM

400 to 1200

10 to 30

- 40 to 125

t_q

Range

µs

°C

T_J

Note

• t_q= 10 to 20 µs for 400 to 800 V devices

t_q= 15 to 30 µs for 1000 to 1200 V devices

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

VOLTAGE

_DRM/V_RRM, MAXIMUM

_RSM, MAXIMUM

I_DRM/I_RRMMAXIMUM

TYPE NUMBER

REPETITIVE PEAK VOLTAGE

NON-REPETITIVE PEAK VOLTAGE AT T_J= T_JMAXIMUM

CODE

400

800

500

900

ST303C..C

1000

1200

1100

1300

Document Number: 94373

Revision: 25-Jul-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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