5秒后页面跳转
ST303C10CCK0P PDF预览

ST303C10CCK0P

更新时间: 2024-11-19 20:37:51
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
10页 309K
描述
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3

ST303C10CCK0P 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:BUTTON包装说明:DISK BUTTON, O-CXDB-X3
针数:2Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.01
Is Samacsys:N其他特性:HIGH SPEED
外壳连接:ISOLATED标称电路换相断开时间:20 µs
配置:SINGLE关态电压最小值的临界上升速率:500 V/us
最大直流栅极触发电流:200 mA最大直流栅极触发电压:3 V
最大维持电流:600 mAJEDEC-95代码:TO-200AB
JESD-30 代码:O-CXDB-X3最大漏电流:50 mA
通态非重复峰值电流:8320 A元件数量:1
端子数量:3最大通态电流:620000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:1180 A
断态重复峰值电压:1000 V重复峰值反向电压:1000 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

ST303C10CCK0P 数据手册

 浏览型号ST303C10CCK0P的Datasheet PDF文件第2页浏览型号ST303C10CCK0P的Datasheet PDF文件第3页浏览型号ST303C10CCK0P的Datasheet PDF文件第4页浏览型号ST303C10CCK0P的Datasheet PDF文件第5页浏览型号ST303C10CCK0P的Datasheet PDF文件第6页浏览型号ST303C10CCK0P的Datasheet PDF文件第7页 
ST303CPbF Series  
Vishay High Power Products  
Inverter Grade Thyristors  
(PUK Version), 620 A  
FEATURES  
• Metal case with ceramic insulator  
• All diffused design  
• Center amplifying gate  
• Guaranteed high dV/dt  
RoHS  
COMPLIANT  
• Guaranteed high dI/dt  
• International standard case TO-200AB (E-PUK)  
• High surge current capability  
• Low thermal impedance  
TO-200AB (E-PUK)  
• High speed performance  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
TYPICAL APPLICATIONS  
• Inverters  
PRODUCT SUMMARY  
IT(AV)  
620 A  
• Choppers  
• Induction heating  
• All types of force-commutated converters  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
620  
UNITS  
A
°C  
A
IT(AV)  
Ths  
55  
1180  
IT(RMS)  
ITSM  
I2t  
Ths  
25  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
7950  
A
8320  
316  
kA2s  
289  
V
DRM/VRRM  
400 to 1200  
10 to 30  
- 40 to 125  
V
tq  
Range  
µs  
°C  
TJ  
Note  
• tq = 10 to 20 µs for 400 to 800 V devices  
tq = 15 to 30 µs for 1000 to 1200 V devices  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VOLTAGE  
V
DRM/VRRM, MAXIMUM  
V
RSM, MAXIMUM  
IDRM/IRRM MAXIMUM  
TYPE NUMBER  
REPETITIVE PEAK VOLTAGE  
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM  
CODE  
V
mA  
04  
08  
10  
12  
400  
800  
500  
900  
ST303C..C  
50  
1000  
1200  
1100  
1300  
Document Number: 94373  
Revision: 25-Jul-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

与ST303C10CCK0P相关器件

型号 品牌 获取价格 描述 数据表
ST303C10CCK1 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCK1LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK1P VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK2LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK3 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCK3LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK3P VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCL0 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCL0LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCL1 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)