是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.19 | Is Samacsys: | N |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
最大漏电流: | 50 mA | 通态非重复峰值电流: | 8320 A |
最大通态电压: | 2.16 V | 最大通态电流: | 620000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 1000 V | 子类别: | Silicon Controlled Rectifiers |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST303C10CCK0LP | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK0P | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK1 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM) | |
ST303C10CCK1LP | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK1P | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK2LP | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK3 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM) | |
ST303C10CCK3LP | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCK3P | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 | |
ST303C10CCL0 | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM) |