Datasheet > ST303C10CCJ2L

ST303C10CCJ2L

更新时间： 2024-11-20 04:46:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	184K
描述
Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)

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ST303C10CCJ2L 数据手册

Bulletin I25186 rev. B 04/00

ST303C..L SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AC (B-PUK)

All diffused design

515A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capibility

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AC (B-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST303C..L

Units

515

°C

@ T

I_T(RMS)

I_TSM

I²t

995

@ T

°C

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

7950

8320

316

289

KA²s

_DRM/V_RRM

400 to 1200

10 to 30

t range (*)

µs

T_J

- 40 to 125

°C

(*) t = 10 to 20µs for 400 to 800V devices

= 15 to 30µs for 1000 to 1200V devices

Document Number: 93675

www.vishay.com

12 3 4 5 6 7...10

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ST303C10CCK0	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCK0LP	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK0P	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK1	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCK1LP	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK1P	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCK2LP	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1