Datasheet > ST303C08LHN3LP

ST303C08LHN3LP

更新时间： 2024-11-20 03:31:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	265K
描述
Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM)

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ST303C08LHN3LP 数据手册

Bulletin I25237 10/06

ST303CLPbF SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AC (B-PUK)

All diffused design

515A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capibility

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AC (B-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST303C..L

Units

515

°C

@ T

I_T(RMS)

995

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

7950

8320

316

289

I²t

KA²s

V_DRM/V_RRM

400 to 1200

10 to 30

t range (*)

µs

T_J

- 40 to 125

°C

(*) t = 10 to 20µs for 400 to 800V devices

t = 15 to 30µs for 1000 to 1200V devices

www.irf.com

12 3 4 5 6 7...9

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与ST303C08LHN3LP相关器件

型号	品牌	获取价格	描述	数据表
ST303C08LHN3P	VISHAY	获取价格	Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL,
ST303C08LHN3PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C10CCJ0	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCJ0P	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCJ1	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCJ1L	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCJ1LP	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCJ2L	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCJ3L	VISHAY	获取价格	Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCJ3LP	VISHAY	获取价格	Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1