Datasheet > ST303C08LHN0LP

ST303C08LHN0LP

更新时间： 2024-11-20 06:46:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	349K
描述
Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL, BPUK-2

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ST303C08LHN0LP 数据手册

ST303CLPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

RoHS

COMPLIANT

• Guaranteed high dI/dt

• International standard case TO-200AC (B-PUK)

• High surge current capability

• Low thermal impedance

TO-200AC (B-PUK)

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

PRODUCT SUMMARY

TYPICAL APPLICATIONS

• Inverters

I_T(AV)

515 A

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

515

UNITS

°C

I_T(AV)

T_hs

995

I_T(RMS)

I_TSM

I²t

T_hs

°C

50 Hz

60 Hz

50 Hz

60 Hz

7950

8320

316

kA²s

289

_DRM/V_RRM

400 to 1200

10 to 30

- 40 to 125

t_q

Range

µs

°C

T_J

Note

• t_q= 10 to 20 µs for 400 to 800 V devices

t_q= 15 to 30 µs for 1000 to 1200 V devices

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

_DRM/V_RRM, MAXIMUM

_RSM, MAXIMUM

I_DRM/I_RRMMAXIMUM

VOLTAGE

CODE

TYPE NUMBER

REPETITIVE PEAK VOLTAGE

NON-REPETITIVE PEAK VOLTAGE AT T_J= T_JMAXIMUM

400

800

500

900

ST303C..L

1000

1200

1100

1300

Document Number: 94374

Revision: 25-Jul-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

12 3 4 5 6 7...10

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与ST303C08LHN0LP相关器件

型号	品牌	获取价格	描述	数据表
ST303C08LHN0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN1	VISHAY	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN1P	VISHAY	获取价格	Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM), TO-200AC, ROHS COMPLIANT, METAL,
ST303C08LHN1PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN2	VISHAY	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN2L	VISHAY	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN2LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN2P	INFINEON	获取价格	Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM)
ST303C08LHN3L	INFINEON	获取价格	Silicon Controlled Rectifier, 995A I(T)RMS, 515000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele
ST303C08LHN3LP	INFINEON	获取价格	Silicon Controlled Rectifier, 515000mA I(T), 800V V(DRM)