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ST303C08LHN0 PDF预览

ST303C08LHN0

更新时间: 2024-11-20 03:25:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 190K
描述
Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC, METAL CASE WITH CERAMIC INSULATOR, BPUK-3

ST303C08LHN0 数据手册

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Bulletin I25186 rev. B 04/00  
ST303C..L SERIES  
INVERTER GRADE THYRISTORS  
Hockey Puk Version  
Features  
Metal case with ceramic insulator  
International standard case TO-200AC (B-PUK)  
All diffused design  
515A  
Center amplifying gate  
Guaranteed high dV/dt  
Guaranteed high dI/dt  
High surge current capibility  
Low thermal impedance  
High speed performance  
TypicalApplications  
Inverters  
Choppers  
case style TO-200AC (B-PUK)  
Induction heating  
All types of force-commutated converters  
Major Ratings and Characteristics  
Parameters  
IT(AV)  
ST303C..L  
Units  
515  
55  
A
°C  
@ T  
hs  
IT(RMS)  
ITSM  
I2t  
995  
25  
A
@ T  
°C  
hs  
@ 50Hz  
@ 60Hz  
@ 50Hz  
@ 60Hz  
7950  
8320  
316  
289  
A
A
KA2s  
KA2s  
V
DRM/VRRM  
400 to 1200  
10 to 30  
V
t range (*)  
q
µs  
TJ  
- 40 to 125  
°C  
(*) t = 10 to 20µs for 400 to 800V devices  
q
t
= 15 to 30µs for 1000 to 1200V devices  
q
Document Number: 93675  
www.vishay.com  
1

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Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
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ST303C08LHN2L VISHAY

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Silicon Controlled Rectifier, 995A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC,
ST303C08LHN2LPBF INFINEON

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ST303C08LHN2P INFINEON

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