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ST2341SRG PDF预览

ST2341SRG

更新时间: 2024-11-07 17:15:31
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
7页 672K
描述
SOT-23

ST2341SRG 数据手册

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ST2341SRG  
P Channel Enhancement Mode MOSFET  
-3.2A  
DESCRIPTION  
ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which  
is produced using high cell density, DMOS trench technology.This high density process is  
especially tailored to minimize on-state resistance.These devices are particularly suited for  
low voltage application such as cellular phone and notebook computer power management,  
other battery powered circuits, and low in-line power loss are required. The product is in  
a very small outline surface mount package.  
FEATURE  
PIN CONFIGURATION  
SOT-23  
!
!
!
!
!
-20V/-3.2A, RDS(ON) =45mΩ (Typ.)  
@VGS = -4.5V  
-20V/-2.0A, RDS(ON) = 53mΩ  
@VGS = -2.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum  
DC current capability  
SOT-23 package design  
3
D
G
S
1
2
1.Gate 2.Source 3.Drain  
PART MARKING  
SOT-23  
3
4
1YA  
1
2
Y: Year Code A: Process Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
ST2341SRG 2014. V1  

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