Datasheet > ST2341SRG

ST2341SRG

更新时间： 2024-09-16 17:15:31

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ST2341SRG 数据手册

ST2341SRG

P Channel Enhancement Mode MOSFET

-3.2A

DESCRIPTION

ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology.This high density process is

especially tailored to minimize on-state resistance.These devices are particularly suited for

low voltage application such as cellular phone and notebook computer power management,

other battery powered circuits, and low in-line power loss are required. The product is in

a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23

-20V/-3.2A, R_DS(ON)=45mΩ (Typ.)

@VGS = -4.5V

-20V/-2.0A, R_DS(ON)= 53mΩ

@VGS = -2.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

11YTAA

Y: Year Code A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341SRG 2014. V1

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
ST2342	STANSON	获取价格	N Channel Enhancement Mode MOSFET
ST2342S23RG	STANSON	获取价格	N Channel Enhancement Mode MOSFET
ST2349	STMICROELECTRONICS	获取价格	4-bit dual supply level translator without direction control pin
ST2349A	STMICROELECTRONICS	获取价格	4-bit dual supply level translator without direction control pin
ST2349AQTR	STMICROELECTRONICS	获取价格	4-bit dual supply level translator without direction control pin
ST2349IQTR	STMICROELECTRONICS	获取价格	SPECIALTY INTERFACE CIRCUIT
ST2349QTR	STMICROELECTRONICS	获取价格	4-bit dual supply level translator without direction control pin
ST235RAA	COILCRAFT	获取价格	Chip Inductors for Critical Applications
ST235RAA10N_LZ	COILCRAFT	获取价格	Chip Inductors for Critical Applications
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