Datasheet > ST2341S23RG

ST2341S23RG

更新时间： 2024-11-06 06:14:27

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
6页	339K
描述
P Channel Enhancement Mode MOSFET

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ST2341S23RG 数据手册

ST2341

P Channel Enhancement Mode MOSFET

-3.5A

DESCRIPTION

ST2341 is the P-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23-3L

-20V/-3.3A, R_DS(ON)= 36m-ohm (Typ.)

@VGS = -10V

-20V/-2.8A, R_DS(ON)= 45m-ohm

@VGS = -4.5V

-20V/-2.3A, R_DS(ON)= 55m-ohm

@VGS = -1.8V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23-3L package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23-3L

41YA

Y: Year Code A: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

ST2341S23RG

SOT-23-3L

41YA

※ Process Code : A ~ Z ; a ~ z

※ ST2341S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2341 2006. Rev.1

12 3 4 5 6

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