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ST2341A PDF预览

ST2341A

更新时间: 2024-11-05 12:50:51
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
6页 582K
描述
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

ST2341A 数据手册

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ST2341A  
P Channel Enhancement Mode MOSFET  
-6.0A  
DESCRIPTION  
ST2341A is the P-Channel logic enhancement mode power field effect transistor which  
is produced using high cell density, DMOS trench technology. This high density  
process is especially tailored to minimize on-state resistance. These devices are  
particularly suited for low voltage application such as cellular phone and notebook  
computer power management, other battery powered circuits, and low in-line power  
loss are required. The product is in a very small outline surface mount package.  
FEATURE  
PIN CONFIGURATION  
SOT-23-3L  
-30V/-6.0A, RDS(ON) = 20m-ohm (Typ.)  
@VGS = -10V  
-30V/-3.8A, RDS(ON) = 28m-ohm  
@VGS = -4.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and maximum  
DC current capability  
SOT-23-3L package design  
3
D
G
1
S
2
1.Gate 2.Source 3.Drain  
PART MARKING  
SOT-23-3L  
3
41YA  
1
2
Y: Year Code A: Process Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
ST2341A 2010. Rev.1  

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