Datasheet > ST173S10MCJ0PBF

ST173S10MCJ0PBF

更新时间： 2024-12-02 08:15:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	176K
描述
Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, ROHS COMPLIANT, TO-93, 3 PIN

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ST173S10MCJ0PBF 数据手册

ST173SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 175 A

FEATURES

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

RoHS

COMPLIANT

TO-209AB (TO-93)

• Designed and qualified for industrial level

PRODUCT SUMMARY

TYPICAL APPLICATIONS

• Inverters

I_T(AV)

175 A

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

VALUES

175

UNITS

I_T(AV)

T_C

°C

I_T(RMS)

275

50 Hz

60 Hz

50 Hz

60 Hz

4680

I_TSM

4900

110

I²t

kA²s

100

_DRM/V_RRM

1000 to 1200

15 to 25

- 40 to 125

t_q

Range

µs

°C

T_J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

_DRM/V_RRM, MAXIMUM

_RSM, MAXIMUM

I_DRM/I_RRMMAXIMUM

VOLTAGE

CODE

TYPE NUMBER

REPETITIVE PEAK VOLTAGE

NON-REPETITIVE PEAK VOLTAGE AT T_J= T_JMAXIMUM

1000

1200

1100

1300

ST173S

Document Number: 94367

Revision: 29-Apr-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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型号	品牌	获取价格	描述	数据表
ST173S10MCJ1L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCJ1LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCJ1PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCJ2	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCJ2L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCJ2LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCJ2PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCK0	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCK0LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCK0PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E