Datasheet > ST173S10MCJ0LPBF

ST173S10MCJ0LPBF

更新时间： 2024-12-01 14:31:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅栅极
页数	文件大小	规格书
9页	132K
描述
Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB

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ST173S10MCJ0LPBF 数据手册

Bulletin I25181 rev. C 12/96

ST173S SERIES

Stud Version

INVERTER GRADE THYRISTORS

Features

175A

All diffused design

Center amplifying gate

Guaranteed high dv/dt

Guaranteed high di/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173S

175

Units

@ T_C

°C

I_T(RMS)

I_TSM

275

4680

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4900

I²t

110

KA²s

100

V_DRM/V_RRM

1000 to 1200

15 to 25

- 40 to 125

case style

TO-209AB (TO-93)

range

µs

T_J

°C

www.irf.com

12 3 4 5 6 7...9

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与ST173S10MCJ0LPBF相关器件

型号	品牌	获取价格	描述	数据表
ST173S10MCJ0PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCJ1L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCJ1LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCJ1PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCJ2	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCJ2L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCJ2LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCJ2PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCK0	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCK0LPBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E