是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | BUTTON | 包装说明: | DISK BUTTON, O-CEDB-N2 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.58 |
其他特性: | HIGH SPEED | 标称电路换相断开时间: | 15 µs |
配置: | SINGLE | 最大直流栅极触发电流: | 200 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 600 mA |
JEDEC-95代码: | TO-200AB | JESD-30 代码: | O-CEDB-N2 |
最大漏电流: | 40 mA | 通态非重复峰值电流: | 4900 A |
元件数量: | 1 | 端子数量: | 2 |
最大通态电流: | 330000 A | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | ROUND | 封装形式: | DISK BUTTON |
认证状态: | Not Qualified | 最大均方根通态电流: | 610 A |
断态重复峰值电压: | 1200 V | 重复峰值反向电压: | 1200 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | YES |
端子面层: | Nickel (Ni) | 端子形式: | NO LEAD |
端子位置: | END | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST173C12CFK0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
ST173C12CFK1L | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM) | |
ST173C12CFK1LP | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C12CFK1LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
ST173C12CFK1P | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C12CFK1PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A | |
ST173C12CFK2L | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM) | |
ST173C12CFK2LP | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C12CFK2P | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C12CFK2PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A |