Datasheet > 触发装置 > 可控硅整流器> ST173C12CEH1LP

ST173C12CEH1LP

更新时间： 2024-11-19 03:40:35

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器
页数	文件大小	规格书
9页	280K
描述
INVERTER GRADE THYRISTORS

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中文翻译

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数据手册

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ST173C12CEH1LP 数据手册

Bulletin I25233 10/06

ST173CPbF SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

330A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

Typical Applications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173C..C

330

Units

@ T

°C

I_T(RMS)

I_TSM

I²t

610

@ T

°C

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4680

4900

110

KA²s

100

_DRM/V_RRM

1000 to1200

15 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

中文翻译

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与ST173C12CEH1LP相关器件

型号	品牌	获取价格	描述	数据表
ST173C12CEH1P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CEH1P	VISHAY	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST173C12CEH1PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A
ST173C12CEH2	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)
ST173C12CEH2L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)
ST173C12CEH2LP	VISHAY	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST173C12CEH2LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CEH2LPBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A
ST173C12CEH2P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CEH2PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A