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ST173C12CDK0LPBF

更新时间： 2024-11-19 13:14:03

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极触发装置可控硅整流器
页数	文件大小	规格书
9页	280K
描述
Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST173C12CDK0LPBF 数据手册

Bulletin I25233 10/06

ST173CPbF SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

330A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

Typical Applications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173C..C

330

Units

@ T

°C

I_T(RMS)

I_TSM

I²t

610

@ T

°C

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4680

4900

110

KA²s

100

_DRM/V_RRM

1000 to1200

15 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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与ST173C12CDK0LPBF相关器件

型号	品牌	获取价格	描述	数据表
ST173C12CDK0P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CDK0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A
ST173C12CDK1	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST173C12CDK1L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)
ST173C12CDK1LP	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CDK1LPBF	INFINEON	获取价格	暂无描述
ST173C12CDK1P	INFINEON	获取价格	INVERTER GRADE THYRISTORS
ST173C12CDK1PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-200A
ST173C12CDK2	INFINEON	获取价格	Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST173C12CDK2L	VISHAY	获取价格	Silicon Controlled Rectifier, 330000mA I(T), 1200V V(DRM)