Datasheet > ST13002T

ST13002T

更新时间： 2024-09-24 06:14:27

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商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	175K
描述
NPN Silicon Power Transistors

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ST13002T 数据手册

ST 13002T / ST 13003T

NPN Silicon Power Transistors

These devices are designed for high-voltage,

high-speed power switching inductive circuits

where fall time is critical.

They are particularly suited for 115 and 220V

SWITCHMODE applications such as Switching

Regulator’s, Inverters, Motor Controls, Solenoid /

Relay drivers and Deflection circuits.

TO-126 Plastic Package

Value

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Unit

ST13002T ST13003T

Collector Emitter Voltage

V_CEO(sus)

V_CEV

V_EBO

I_C

I_CM

I_B

I_BM

I_E

300

600

400

700

Emitter Base Voltage

Collector Current - Continuous

Collector Current - Peak ¹⁾

Base Current - Continuous

Base Current - Peak ¹⁾

1.5

0.75

1.5

2.25

4.5

1.4

11.2

Emitter Current - Continuous

Emitter Current - Peak ¹⁾

I_EM

Total Power Dissipation @ T_A= 25 C

P_D

Derate above 25 C

mW/ C

Total Power Dissipation @ T_C= 25 C

P_D

Derate above 25 C

320

mW/ C

Operating and Storage Junction Temperature Range

Thermal Resistance ,Junction to Ambient

Thermal Resistance ,Junction to Case

T_J, T_s

-65 to +150

R_θ

C/W

R_θ

3.12

C/W

Pulse Test: Pulse Width=5ms, Duty Cycle≤10%.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 28/04/2006

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