Datasheet > ST13001

ST13001

更新时间： 2024-11-12 09:03:19

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	162K
描述
NPN Silicon Epitaxial Planar Transistor

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ST13001 数据手册

ST 13001

NPN Silicon Epitaxial Planar Transistor

for high voltage and high speed switching applications

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

V_CBO

V_CEO

V_EBO

500

400

Collector Current (DC)

Total Power Dissipation

Junction Temperature

Storage Temperature Range

I_C

0.3

P_tot

0.75

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 10 V, I_C= 0.25 mA

at V_CE= 20 V, I_C= 20 mA

h_FE

Collector Base Cutoff Current

at V_CB= 500 V

Collector Emitter Cutoff Current

at V_CE= 400 V

Emitter Base Cutoff Current

at V_EB= 9 V

Collector Base Breakdown Voltage

at I_C= 100 µA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Emitter Saturation Voltage

at I_C= 50 mA, I_B= 10 mA

Base Emitter Saturation Voltage

at I_C= 50 mA, I_B= 10 mA

I_CBO

I_CEO

100

200

100

µA

I_EBO

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

f_T

500

400

0.5

1.2

Transition Frequency

at V_CE= 20 V, I_C= 20 mA, f = 1 MHz

Fall Time

at I_C= 50 mA, I_B= -I_B2= 5 mA, V_CC= 45 V

Storage Time

at I_C= 50 mA, I_B= -I_B2= 5 mA, V_CC= 45 V

MHz

µs

t_f

0.3

1.5

t_s

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 29/08/2008

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