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ST1200 PDF预览

ST1200

更新时间: 2024-01-28 01:30:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 存储内存集成电路可编程只读存储器OTP只读存储器电动程控只读存储器
页数 文件大小 规格书
2页 27K
描述
Memory Card IC 256 bit OTP EPROM with Lock-Out

ST1200 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.84
Is Samacsys:N内存密度:256 bit
内存集成电路类型:OTP ROM内存宽度:1
功能数量:1字数:256 words
字数代码:256工作模式:ASYNCHRONOUS
组织:256X1并行/串行:PARALLEL
认证状态:Not Qualified技术:NMOS
Base Number Matches:1

ST1200 数据手册

 浏览型号ST1200的Datasheet PDF文件第2页 
ST1200  
Memory Card IC  
256 bit OTP EPROM with Lock-Out  
DATA BRIEFING  
256 x 1 bit Organisation  
96 bits Protected in Write Mode By Lock-Out  
Fuse  
5 V Power Supply (V ) and 21 V Programming  
CC  
Voltage (V )  
PP  
85 mW in Read Mode  
Power On Reset  
Very High Reliability Level  
Micromodule (D10)  
Standard Delivery: Wafer Form and  
Micromodule Package  
DESCRIPTION  
The ST1200 is a 256 bit OTP (one time program-  
mable) EPROM, organized as 256 x 1, manufac-  
tured using ST’s highly reliable and well proven  
NMOS technology.  
The security mechanism, called Lock-Out, allows  
the user to inhibit, in write mode, the access to a  
memory section of 96 bits. Thus, by blowing a  
polysilicon fuse, the address bits 0 to 95 can be  
protected against write.  
The 9th bit of the ST1200 is set to a logical “1” for  
device identification purposes. In order to avoid  
any modification, ST has mask-programmed this  
bit to the logic “1” state.  
Wafer  
Figure 1. Logic Diagram  
V
V
PP  
CC  
Table 1. Signal Names  
A
Function code  
Function code  
Fuse control  
Data Output  
B
FUS  
OUT  
ST  
A
OUT  
FUS  
ST1200  
Strobe input  
- validates function codes  
- in programming mode used as a  
programming pulse  
ST  
B
Programming voltage (must be preset  
before programming and held after)  
V
V
PP  
CC  
Power  
GND  
Ground  
GND  
DS120005  
October 1999  
1/2  
Complete data available under NDA.  

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