Datasheet > ST1000B210V

ST1000B210V

更新时间： 2023-01-03 08:31:07

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	95K
描述
Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, ISOLATED MINISTUD-1

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ST1000B210V 数据手册

Solid State Devices, Inc.

ST1000 Series

14701 Firestone Blvd * La Mirada, CA 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

FEATURES:

1000 W

•

Hermetically Sealed in Glass

High Peak Transient Power 1000 W

Can Be Used as a 5 W Zener

Available in Axial, Surface Mount, and Ministud

Configurations

Transient Voltage Suppressor

7.5 – 270 VOLTS

TX, TXV, and Space Level Screening Available^2/

Axial

•

Higher Voltages Available (consult factory)

Part Number / Ordering Information ^1/

ST1000 A 9.6 SMS TX

DIM

MIN

––

0.047”

1.0”

MAX

0.158”

0.185”

0.053”

––

Screening ^2/

│

└

│

└

│

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

Package: ^3/

└

SMS

__ = Axial

SMS = Square Tab

V = Isolated Ministud

C = Ministud

Voltage: 9.6 = 9.6V

DIM

MIN

MAX

0.160”

0.225”

0.027”

––

Tolerance A = ± 10%

B = ± 5 %

0.155"

0.200”

0.018”

0.001”

Maximum Ratings

Symbol Value Units

Peak pulse power dissipation ^5/

10/1000 µs waveform (see Fig 1 & 2)

Isolated Ministud

1000 -

500

P_PPM

ºC

Steady State Power Dissipation

Axial Lead : T_L=25ºC, L=3/8"

SMS & Ministud: T_Cor T_E= 75 ºC

P_D

5.0

-65 to

+175

Operating and Storage Temp.

T_op& T_stg

Maximum Forward Voltage Drop

I_F= 1.0 Apk, T_A= 25 ºC, pulsed

Ministud

V_F

1.2

Thermal Resistance,

Junction to Lead L=3/8”

R_θJL

ºC/W

Thermal Resistance,

Junction to End Cap

Junction to Case

R_θJE

R_θJC

ºC/W

NOTES:

1/ For ordering information, price, and availability – contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request. X-Ray shall be performed in lieu of Precap Inspection – Consult factory.

3/ Consult factory for package outlines.

4/ Pulsed @ 300µs nominal, other pulse widths will provide different results due to self heating.

5/ Non-repetitive current pulse. For voltages greater than 120V the peak power rating is 500 W.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: T00033B

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与ST1000B210V相关器件

型号	品牌	获取价格	描述	数据表
ST1000B210VTXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220C	SSDI	获取价格	1000 W, 220 V Transient Voltage Suppressors
ST1000B220S	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220SMS	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220SMSS	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220SMSTXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B220V	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 180V V(RWM), Unidirectional, 1 Element, Silicon, HE
ST1000B22TXV	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, HER
ST1000B22VTX	SSDI	获取价格	Trans Voltage Suppressor Diode, 1000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, HER

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