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ST1000B13C

更新时间： 2024-11-12 19:20:35
品牌 Logo 应用领域
SSDI 二极管
页数 文件大小 规格书
2页 108K
描述
Trans Voltage Suppressor Diode, 1000W, 11V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, MINISTUD-1

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ST1000B13C 技术参数

生命周期：Active包装说明：O-MUPM-X1
针数：1Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.74最大击穿电压：13.65 V
最小击穿电压：12.35 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-MUPM-X1最大非重复峰值反向功率耗散：1000 W
元件数量：1端子数量：1
封装主体材料：METAL封装形状：ROUND
封装形式：POST/STUD MOUNT极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：11 V表面贴装：NO
技术：ZENER端子形式：UNSPECIFIED
端子位置：UPPERBase Number Matches：1

ST1000B13C 数据手册

 浏览型号ST1000B13C的Datasheet PDF文件第2页 
Solid State Devices, Inc.  
ST1000 Series  
14701 Firestone Blvd * La Mirada, CA 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
FEATURES:  
1000 W  
Hermetically Sealed in Glass  
High Peak Transient Power 1000 W  
Can Be Used as a 5 W Zener  
Transient Voltage Suppressor  
7.5 – 510 VOLTS  
Available in Axial, Surface Mount, and Ministud  
Configurations  
TX, TXV, and Space Level Screening Available2/  
Axial  
Higher Voltages Available (consult factory)  
Part Number / Ordering Information 1/  
ST1000 A 9.1 SMS TX  
│
│
│
│
│
│
│
│
│
│
│
│
│
│
│
└
Screening 2/  
DIM  
A
B
C
D
MIN  
––  
––  
0.047”  
1.0”  
MAX  
0.158”  
0.185”  
0.053”  
––  
__= Not Screened  
TX = TX Level  
TXV = TXV Level  
S
= S Level  
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Package: 3/  
__ = Axial  
SMS  
SMS = Square Tab  
V = Isolated Ministud  
C = Ministud  
Voltage: example  
9.1 = 9.1V  
Tolerance A = 10%  
B = 5 %  
DIM  
A
B
C
D
MIN  
MAX  
0.180”  
0.225”  
0.027”  
––  
0.170"  
0.200”  
0.018”  
0.001”  
Maximum Ratings  
Symb l Value Unit  
Peak pulse power dissipation  
PPPM  
PPPM  
1000  
500  
W
W
100 µs Square Wave (see Fig 2)  
Isolated Ministud  
Peak pulse power dissipation 5/  
10/1000 µs waveform (see Fig 1 & 2)  
Steady State Power Dissipation  
Axial Lead : TL=25ºC, L=3/8"  
SMS & Ministud: TC or TE = 75 ºC  
PD  
6.0  
W
-65 to  
+175  
Operating and Storage Temp.  
Top & Tstg  
VF  
ºC  
V
Maximum Forward Voltage Drop  
IF = 6.0 Apk, TA = 25 ºC, pulsed  
1.3  
25  
Ministud  
Thermal Resistance,  
Junction to Lead L=3/8”  
RθJL  
ºC/W  
Thermal Resistance,  
Junction to End Cap  
Junction to Case  
RθJE  
RθJC  
8
ºC/W  
NOTES:  
1/ For ordering information, price, and availability – contact factory.  
2/ Screening based on MIL-PRF-19500. Screening flows available on request. X-Ray shall be performed in lieu of Precap Inspection – Consult factory.  
3/ Consult factory for package outlines.  
4/ All voltages are measured with an automated test set using a 35 msec test time. Longer or shorter test time will have a corresponding effect on the  
measured value due to heating effects.  
5/ Exponential waveform i.a.w. IEC60-1 10/1000 uS pulse  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: T00033D  
DOC  
12

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