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ST091SM PDF预览

ST091SM

更新时间: 2024-09-24 18:09:03
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 210K
描述
Trans Voltage Suppressor Diode, 150W, Unidirectional, 1 Element, Silicon,

ST091SM 技术参数

生命周期:Active包装说明:O-LELF-R2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-LELF-R2最大非重复峰值反向功率耗散:150 W
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:3 W认证状态:Not Qualified
表面贴装:YES技术:AVALANCHE
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

ST091SM 数据手册

 浏览型号ST091SM的Datasheet PDF文件第2页 

与ST091SM相关器件

型号 品牌 获取价格 描述 数据表
ST093C06CFF INFINEON

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Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 600V V(DRM), 600V V(RRM), 1 Ele
ST093C08CFF INFINEON

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Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele
ST093C08CFJ INFINEON

获取价格

Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 800V V(DRM), 800V V(RRM), 1 Ele
ST093C10CFF INFINEON

获取价格

Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST093C10CFJ INFINEON

获取价格

Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST093C12CFJ INFINEON

获取价格

Silicon Controlled Rectifier, 345A I(T)RMS, 220000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E
ST093S06MFF INFINEON

获取价格

Silicon Controlled Rectifier, 150A I(T)RMS, 95000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem
ST093S06MFJ INFINEON

获取价格

Silicon Controlled Rectifier, 150A I(T)RMS, 95000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem
ST093S06PFF INFINEON

获取价格

Silicon Controlled Rectifier, 150A I(T)RMS, 95000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem
ST093S06PFJ INFINEON

获取价格

Silicon Controlled Rectifier, 150A I(T)RMS, 95000mA I(T), 600V V(DRM), 600V V(RRM), 1 Elem