ST-23G

更新时间： 2024-01-03 09:49:29

品牌	Logo	应用领域
可天士 - KODENSHI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
2页	213K
描述
Photo transistors(high-sensitivity NPN silicon phototransistor mounted in a clear sidelooking)

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技术参数
数据手册

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ST-23G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.27	最大暗电源：	100 nA
安装特点：	THROUGH HOLE MOUNT	最大通态电流：	0.04 A
最高工作温度：	100 °C	最低工作温度：	-20 °C
光电设备类型：	PHOTO TRANSISTOR	峰值波长：	880 nm
最大功率耗散：	0.1 W	子类别：	Photo Transistors
表面贴装：	NO

ST-23G 数据手册

Photo transistors

K O D E N S H I

S T - 2 3 G

DIMENSIONS

(Unit : mm)

The ST- 23G, a high- sensitivity NPN silicon phototransistor

mounted in a clear sidelooking package, is compact, low

profile and easy to mount.

FEATURES

• Low profile package

• C o m p a c t

• L o w - c o s t

• Sidelooking plastic package

APPLICATIONS

• P h o t o i n t e r r u p t e r s

• Optical switches

MAXIMUM RATINGS

( T a = ℃2)5

I t e m

S y m b o Rl a t i n g U n i t

C- E voltage

3 0

E- C voltage

Collector current

4 0

m A

m W

℃

Collector power dissipation

Operating temp.

1 0 0

T o p r .

T s t g .

T s o l .

2 0 ~ + 1 0 0

3 0 ~ + 1 0 0

2 6 0

Storage Temp.

℃

Soldering temp.

℃

*1. For MAX.5 seconds at the position of 2 mm from the package

ELECTRO-OPTICAL CHARACTERISTICS

( T a = ℃2 )5

I t e m

S y m b o l

C o n d i t i o n s

M i n . T y p .

M a x .

U n i t .

E O

Collector dark current

Light current

C- E saturation voltage

1 0 V

1 0 0

2 0

0 . 4

n A

m A

μs e c .

n m

V = 5V, 1,000lx

I = 0.5mA, 2,000lx

0 . 5

4 . 0

0 . 2

3 . 2

4 . 8

5 0 0 ~ 1 , 0 5 0

8 8 0

( s a t )

Rise time

Fall time

= 10V, I = 5 m A ,

t r

t f

λ p

Switching speeds

R = 1 0Ω0

Spectral sensitivity

Peak wavelength

Half anglee

n m

d e g .

± 3 0

*2. Color temp.= 2856K standard Tungsten lamp

- 1-

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