Photo transistors
K O D E N S H I
S T - 1 K ·L 3S AT - 1 K L 3 B
DIMENSIONS
(Unit : mm)
The ST- 1KL3A a nd 1KL3B a re high- s e ns itivity
NPN silicon phototransistors mounted in durable,
he rm e tic a lly s e a le d TO- 18 m e ta l c a n whic h
provide years of reliable performance, even under
demanding conditions such as use outdoors.
FEATURES
• Narrow angular response
• D u r a b l e
• High reliability in demanding environments
• Two leads (Collector, Emitter) ST- 1KL3A
•
Thre e le a d s (Co lle c to r, Em itte r, Ba s e ) ST-
1 K L 3 B
APPLICATIONS
• Optical switches
• Optical detectors
• Infrared sensors
• E n c o d e r s
• Smoke detectors
ST-1KL3A
ST-1KL3B
MAXIMUM RATINGS
( T a = ℃2)5
I t e m
C- E voltage
S y m b o Rl a t i n g U n i t
C
E
O
V
4 0
V
E
V
C
O
E- C voltage
6
V
C
Collector current
I
5 0
m A
m W
℃
C
Collector power dissipation
Operating temp.
P
1 5 0
T o p r .
T s t g .
T s o l .
-
-
3 0 ~ + 1 0 0
5 0 ~ + 1 5 0
2 6 0
Storage Temp.
℃
*
1
Soldering temp.
℃
*1. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
( T a = ℃2 )5
I t e m
S y m b o l
C o n d i t i o n s
M i n . T y p .
M a x .
U n i t .
C
E O
Collector dark current
Light current
C- E saturation voltage
C
E
O
V
=
1 0 V
1
2 0 0
1 5
0 . 4
n A
m A
V
μs e c .
μs e c .
n m
I
*
2
C
E
L
V
= 10V, 200lx
I = 5mA, 2,000lx
1 . 5
5 . 0
0 . 2
3 . 2
4 . 8
5 0 0 ~ 1 , 0 5 0
8 8 0
± 6
I
*
2
C
C
V
E
( s a t )
C
V
C
C
Rise time
Fall time
= 10V, I = 5 m A ,
t r
t f
λ
λ p
θ
Switching speeds
L
R = 1 0Ω0
Spectral sensitivity
Peak wavelength
Half anglee
n m
d e g .
*2. Color temp.= 2856K standard Tungsten lamp
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