生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 20 pF |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 3 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 90 ns |
最大开启时间(吨): | 35 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSU1N60A | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta | |
SSU1N60ATU | FAIRCHILD |
获取价格 |
暂无描述 | |
SSU1N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSU1N60BTU | ROCHESTER |
获取价格 |
0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | |
SSU1N60BTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta | |
SSU1N60BTU-WS | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SSU2955 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA | |
SSU2N55 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 550V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
SSU2N60 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
SSU2N60A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET |