是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 7 weeks | 风险等级: | 5.36 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 100 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 520 V |
最大漏极电流 (ID): | 1.3 A | 最大漏源导通电阻: | 5.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 5 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSU1N55 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 550V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
SSU1N60 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal- | |
SSU1N60A | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta | |
SSU1N60ATU | FAIRCHILD |
获取价格 |
暂无描述 | |
SSU1N60B | FAIRCHILD |
获取价格 |
600V N-Channel MOSFET | |
SSU1N60BTU | ROCHESTER |
获取价格 |
0.9A, 600V, 12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | |
SSU1N60BTU | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta | |
SSU1N60BTU-WS | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SSU2955 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA | |
SSU2N55 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 550V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o |