Datasheet > SSU1N50ATU

SSU1N50ATU

更新时间： 2024-01-10 16:59:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	640K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SSU1N50ATU 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	配置：	Single
最大漏极电流 (Abs) (ID)：	1.3 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	26 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SSU1N50ATU 数据手册

SSR/U1N50A

Advanced Power MOSFET

FEATURES

BV_DSS= 500 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 5.5

I_D= 1.3 A

Improved Gate Charge

Extended Safe Operating Area

D-PAK

I-PAK

Lower Leakage Current : 10 A (Max.) @ V_DS= 500V

Lower R_DS(ON): 4.046 (Typ.)

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

500

1.3

Units

V_DSS

Continuous Drain Current (T_C=25 C)

I_D

Continuous Drain Current (T_C=100 C )

0.82

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

113

1.3

2.6

3.5

2.5

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

Total Power Dissipation (T_A=25

Total Power Dissipation (T_C=25

Linear Derating Factor

)

P_D

0.21

W/ C

Operating Junction and

T_J, T_STG

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R_q

Junction-to-Case

4.76

R_q

Junction-to-Ambient

C/W

R_q

110

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

下载PDF

与SSU1N50ATU相关器件

型号	品牌	描述	获取价格	数据表
SSU1N50B	FAIRCHILD	520V N-Channel MOSFET	获取价格
SSU1N50BTU	ONSEMI	520 V N 沟道 MOSFET	获取价格
SSU1N55	SAMSUNG	Power Field-Effect Transistor, 1A I(D), 550V, 12ohm, 1-Element, N-Channel, Silicon, Metal-	获取价格
SSU1N60	SAMSUNG	Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-	获取价格
SSU1N60A	FAIRCHILD	Power Field-Effect Transistor, 0.9A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Meta	获取价格
SSU1N60ATU	FAIRCHILD	暂无描述	获取价格