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SSTV16859EC PDF预览

SSTV16859EC

更新时间: 2024-11-16 06:14:23
品牌 Logo 应用领域
恩智浦 - NXP 触发器锁存器逻辑集成电路电视双倍数据速率
页数 文件大小 规格书
14页 119K
描述
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM

SSTV16859EC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:PLASTIC, LFBGA-96
针数:96Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.78
Is Samacsys:N系列:SSTV
JESD-30 代码:R-PBGA-B96JESD-609代码:e0
长度:13.5 mm逻辑集成电路类型:D FLIP-FLOP
位数:13功能数量:1
端子数量:96最高工作温度:70 °C
最低工作温度:输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA96,6X16,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH电源:2.5,2.5/3.3 V
传播延迟(tpd):2.8 ns认证状态:Not Qualified
座面最大高度:1.5 mm子类别:Other Logic ICs
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn63Pb37)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
触发器类型:POSITIVE EDGE宽度:5.5 mm
最小 fmax:200 MHzBase Number Matches:1

SSTV16859EC 数据手册

 浏览型号SSTV16859EC的Datasheet PDF文件第2页浏览型号SSTV16859EC的Datasheet PDF文件第3页浏览型号SSTV16859EC的Datasheet PDF文件第4页浏览型号SSTV16859EC的Datasheet PDF文件第5页浏览型号SSTV16859EC的Datasheet PDF文件第6页浏览型号SSTV16859EC的Datasheet PDF文件第7页 
INTEGRATED CIRCUITS  
SSTV16859  
2.5 V 13-bit to 26-bit SSTL_2  
registered buffer for stacked DDR DIMM  
Product data  
2002 Feb 19  
2000 Dec 01  
File under Integrated Circuits — ICL03  
Philips  
Semiconductors  

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