是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | VFQFPN |
包装说明: | VQCCN, LCC56,.31SQ,20 | 针数: | 56 |
Reach Compliance Code: | unknown | HTS代码: | 8542.39.00.01 |
风险等级: | 5.84 | 系列: | SSTV |
JESD-30 代码: | S-CQCC-N56 | JESD-609代码: | e3 |
长度: | 8 mm | 逻辑集成电路类型: | D FLIP-FLOP |
湿度敏感等级: | 3 | 位数: | 13 |
功能数量: | 1 | 端子数量: | 56 |
最高工作温度: | 70 °C | 最低工作温度: | |
输出极性: | TRUE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | VQCCN | 封装等效代码: | LCC56,.31SQ,20 |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, VERY THIN PROFILE |
峰值回流温度(摄氏度): | 260 | 电源: | 2.5 V |
传播延迟(tpd): | 2.6 ns | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 子类别: | Bus Driver/Transceivers |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
温度等级: | COMMERCIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发器类型: | POSITIVE EDGE | 宽度: | 8 mm |
最小 fmax: | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSTV16859DGG | NXP |
获取价格 |
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM | |
SSTV16859DGG | PHILIPS |
获取价格 |
Bus Driver, CMOS, PDSO64 | |
SSTV16859DGG,112 | NXP |
获取价格 |
SSTV16859DGG | |
SSTV16859DGG,118 | NXP |
获取价格 |
SSTV16859DGG | |
SSTV16859EC | NXP |
获取价格 |
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM | |
SSTV16859EC | PHILIPS |
获取价格 |
Bus Driver, CMOS, PBGA96 | |
SSTV16859EC,518 | NXP |
获取价格 |
SSTV16859 - 2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM BGA 96-Pi | |
SSTV16859EC,551 | NXP |
获取价格 |
SSTV16859 - 2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM BGA 96-Pi | |
SSTV16859EC/G,518 | NXP |
获取价格 |
SSTV16859 - 2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM BGA 96-Pi | |
SSTV16859EC/GE | NXP |
获取价格 |
SSTV16859 - 2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM BGA 96-Pi |